View BFQ136_435146.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ136 NPN 4 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
DESCRIPTION NPN transistor in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. It features extremely high output voltage capabilities. It is primarily intended for final stages in UHF amplifiers. PINNING PIN 1 2 3 4 DESCRIPTION collector emitter base emitter
page
BFQ136
4 1 3
2 Top view
MBK187
Fig.1 SOT122A.
QUICK REFERENCE DATA SYMBOL VCEO IC Ptot fT GUM Vo PARAMETER collector-emitter voltage DC collector current total power dissipation transition frequency maximum unilateral power gain output voltage up to Tc = 100 C IC = 500 mA; VCE = 15 V; f = 500 MHz; Tj = 25 C IC = 500 mA; VCE = 15 V; f = 800 MHz; Tamb = 25 C Ic = 500 mA; VCE = 15 V; dim = -60 dB; RL = 75 ; f(p+q-r) = 793.25 MHz; Tamb = 25 C WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. open base CONDITIONS TYP. - - - 4.0 12.5 2.5 MAX. 18 600 9 - - - UNIT V mA W GHz dB V
September 1995
2
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Tc = 100 C open base open collector CONDITIONS open emitter - - - - - -65 - MIN.
BFQ136
MAX. 25 18 2 600 9 150 200
UNIT V V V mA W C C
THERMAL RESISTANCE SYMBOL Rth j-c PARAMETER thermal resistance from junction to case THERMAL RESISTANCE 11 K/W
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE Cc Ce Cre Ccs fT GUM Vo Notes 1. Measured with emitter and base grounded. 2. GUM is the maximum unilateral power gain, assuming S12 is zero and S 21 ------------------------------------------------------------- dB. G UM = 10 log 2 2 1 - S 11 1 - S 22 3. dim = -60 dB; IC = 500 mA; VCE = 15 V; RL = 75 ; Tamb = 25 C; Vp = Vo at dim = -60 dB; fp = 795.25 MHz; Vq = Vo -6 dB; fq = 803.25 MHz; Vr = Vo -6 dB; fr = 805.25 MHz; measured at f(p+q-r) = 793.25 MHz.
2
PARAMETER collector cut-off current DC current gain collector capacitance emitter capacitance feedback capacitance collector-stud capacitance transition frequency maximum unilateral power gain (note 2) output voltage (see Fig.2)
CONDITIONS IE = 0; VCB = 15 V IC = 500 mA; VCE = 15 V IE = ie = 0; VCB = 15 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCE = 15 V; f = 1 MHz note 1 IC = 500 mA; VCE = 15 V; f = 500 MHz IC = 500 mA; VCE = 15 V; f = 800 MHz; Tamb = 25 C note 3
MIN. - 25 - - - - - - -
TYP. - 75 7.0 40 4.0 0.8 4.0 12.5 2.5
MAX. 75 - - - - - - - -
UNIT A pF pF pF pF GHz dB V
September 1995
3
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ136
handbook, full pagewidth
V BB HF choke 4.7 F 1.5 F
VCC
1 nF 14 nH 9 pF 6 nH 9 pF
4.7 F 1 k 14 nH
1.8 pF
7.5 nH
20 pF output 75 36 nH
input 75
DUT 9 pF 3 pF 9 pF
3.3 pF
3 pF
36 nH
MEA261
Fig.2 Intermodulation distortion MATV test circuit.
MBB361
MEA263
handbook, halfpage
120
handbook, halfpage
12
h FE
Cc (pF) 8
80
40
4
0 0 40 80 120 160 I C (mA)
0 0 10 V CB (V)
20
VCE = 15 V; Tj = 25 C.
IE = ie = 0; f = 1 MHz; Tj = 25 C
Fig.3
DC current gain as a function of collector current.
Fig.4
Collector capacitance as a function of collector-base voltage.
September 1995
4
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ136
handbook, halfpage
5
MEA262
MEA264
fT (GHz) 4
handbook, halfpage
40
G UM (dB) 30
3 20 2 10 1
0 10
100
I C (mA)
1000
0 0.1
1
f (MHz)
10
VCE = 15 V; f = 500 MHz; Tj = 25 C
IC = 500 mA; VCE = 15 V; Tamb = 25 C.
Fig.5
Transition frequency as a function of collector current.
Fig.6
Maximum unilateral power gain as a function of frequency.
September 1995
5
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ136
handbook, full pagewidth
1 0.5 2
0.2
1200 MHz 1000 800 500 200 0.2 100 40
5 10 0.5 1 2 5 10
+j 0 -j
10 5
0.2
0.5 1 IC = 500 mA; VCE = 15 V; Tamb = 25 C. Zo = 50 .
2
MEA267
Fig.7 Common emitter input reflection coefficient (S11).
handbook, full pagewidth
90 120 40 60
150 100 200 500 180 1200 MHz 10 20
30
+
30 0
-
150
30
120 90 IC = 500 mA; VCE = 15 V; Tamb = 25 C.
60
MEA266
Fig.8 Common emitter forward transmission coefficient (S21).
September 1995
6
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ136
handbook, full pagewidth
90 120 1200 MHz 150 1000 800 500 200 100 40 0.05 0.10 0.15 30 60
+
0
180
-
150
30
120 90 IC = 500 mA; VCE = 15 V; Tamb = 25 C.
60
MEA268
Fig.9 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
1 0.5 2
0.2 1200 MHz 1000 800 500 0.5 200 100
5 10 1 2 5 10
+j 0 -j
0.2
10 5
0.2
40
0.5 1
2
MEA265
IC = 500 mA; VCE = 15 V; Tamb = 25 C. Zo = 50 .
Fig.10 Common emitter output reflection coefficient (S22).
September 1995
7
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
PACKAGE OUTLINE Studded ceramic package; 4 leads
BFQ136
SOT122A
D
ceramic BeO metal c
A
Q N1 D1
A w1 M A M W
N
D2
N3 X M1
H b
detail X
4 L
3 H 1
2
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.97 4.74 b 5.85 5.58 c 0.18 0.14 D 7.50 7.23 D1 6.48 6.22 D2 7.24 6.93 H 27.56 25.78 L 9.91 9.14 M1 3.18 2.66 M 1.66 1.39 N 11.82 11.04 N1 max. 1.02 N3 3.86 2.92 Q 3.38 2.74 W 8-32 UNC w1 0.381
90
OUTLINE VERSION SOT122A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-04-18
September 1995
8
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFQ136
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1995
9

▲Up To Search▲

Price & Availability of BFQ136

	To Download BFQ136 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .